The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2015

Filed:

Sep. 05, 2013
Applicants:

Wookhyoung Lee, Seongnam-si, KR;

Jongsik Chun, Hwaseong-si, KR;

Sunil Shim, Seoul, KR;

Jaeyoung Ahn, Seongnam-si, KR;

Juyul Lee, Hwaseong-si, KR;

Kihyun Hwang, Seongnam-si, KR;

Hansoo Kim, Suwon-si, KR;

Woonkyung Lee, Seongnam-si, KR;

Jaehoon Jang, Seongnam-si, KR;

Wonseok Cho, Suwon-si, KR;

Inventors:

Wookhyoung Lee, Seongnam-si, KR;

Jongsik Chun, Hwaseong-si, KR;

Sunil Shim, Seoul, KR;

Jaeyoung Ahn, Seongnam-si, KR;

Juyul Lee, Hwaseong-si, KR;

Kihyun Hwang, Seongnam-si, KR;

Hansoo Kim, Suwon-si, KR;

Woonkyung Lee, Seongnam-si, KR;

Jaehoon Jang, Seongnam-si, KR;

Wonseok Cho, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 5/06 (2006.01); G11C 7/00 (2006.01); H01L 23/48 (2006.01); G11C 7/18 (2006.01); H01L 27/115 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
G11C 5/06 (2013.01); G11C 5/063 (2013.01); G11C 7/00 (2013.01); G11C 7/18 (2013.01); H01L 23/48 (2013.01); H01L 27/1157 (2013.01); H01L 27/11519 (2013.01); H01L 27/11524 (2013.01); H01L 27/11556 (2013.01); H01L 27/11565 (2013.01); H01L 27/11582 (2013.01); H01L 27/0207 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Provided is a semiconductor device including gate structures provided on a substrate, a separation insulating layer interposed between the gate structures, and a plurality of cell pillars connected to the substrate through each gate structure. Each gate structure may include horizontal electrodes vertically stacked on the substrate, and an interval between adjacent ones of the cell pillars is non-uniform.


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