The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 2015

Filed:

May. 30, 2014
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventor:

Wei Yu Ma, Taitung, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 23/60 (2006.01); H01L 21/8234 (2006.01); H02H 9/04 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H02H 9/046 (2013.01); H01L 21/8234 (2013.01); H01L 27/0248 (2013.01); H01L 27/0266 (2013.01); H01L 27/0629 (2013.01);
Abstract

A circuit with an electro-static discharge clamp coupled to a first power source and second power source. The electro-static discharge clamp includes an NMOS stack and an electro-static discharge detector. The NMOS stack has a first NMOS transistor with a first gate node and a second NMOS transistor with a second gate node. The electro-static discharge detector is configured to control the NMOS stack, and may include three switches. A first switch is configured to switch the first gate node to the second power source. A second switch is configured to switch the first gate node to the second gate node. A third switch is configured to switch the first gate node to the ground.


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