The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 2015

Filed:

Mar. 15, 2013
Applicant:

Polyera Corporation, Skokie, IL (US);

Inventors:

Antonio Facchetti, Chicago, IL (US);

William Christopher Sheets, Chicago, IL (US);

Don Frye, Skokie, IL (US);

Jingqi Wang, Evanston, IL (US);

Chung-Chin Hsiao, Hsinchu, TW;

Minhuei Wang, HsinchuCounty, TW;

Assignee:

Polyera Corporation, Skokie, IL (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 51/30 (2006.01); H01L 51/00 (2006.01); H01L 51/05 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78693 (2013.01); H01L 29/4908 (2013.01); H01L 29/7869 (2013.01); H01L 29/78606 (2013.01); H01L 51/0034 (2013.01); H01L 51/0035 (2013.01); H01L 51/052 (2013.01); H01L 51/0545 (2013.01);
Abstract

The present teachings provide a coating composition (a passivation formulation) for preparing a coating material in a metal oxide thin film transistor, where the coating material comprises a polymer blend including a polymer and a stabilizing agent. Incorporation of a stabilizing agent according to the present teachings in the coating material can lead to improved device performance of the metal oxide thin film transistor, in particular, reduced shift in the threshold voltage and long-term bias-stress stability.


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