The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2015
Filed:
Oct. 02, 2014
Applicant:
Inotera Memories, Inc., Taoyuan, TW;
Inventors:
Assignee:
INOTERA MEMORIES, INC., Hwa-Ya Technology Park Kueishan, Taoyuan, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 27/108 (2006.01); H01L 27/088 (2006.01); H01L 29/08 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10823 (2013.01); H01L 27/088 (2013.01); H01L 29/0847 (2013.01); H01L 29/4236 (2013.01); H01L 29/4966 (2013.01);
Abstract
A semiconductor structure includes a semiconductor substrate, an active area in the semiconductor substrate, two trenches intersecting the active area to thereby divide the active area into a source region and two drain regions spaced apart from the source region, a saddle-shaped N+/N−/N+ structure in the source region of the active area; and two N+ drain doping regions in the two drain regions, respectively.