The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 2015

Filed:

Jun. 11, 2014
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventor:

Yvonne Lin, Saratoga, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G05F 1/10 (2006.01); H03K 3/01 (2006.01); G05F 3/24 (2006.01); H01L 25/03 (2006.01);
U.S. Cl.
CPC ...
G05F 3/247 (2013.01); H01L 25/03 (2013.01);
Abstract

An integrated circuit includes a first circuit. The first circuit includes a first transistor having a first dopant type. The first circuit further includes a first cascode transistor having the first dopant type, wherein the first cascode transistor connected in series with the first transistor. The first circuit further includes a second transistor having a second dopant type opposite to the first dopant type, wherein the second transistor is connected in series with the first transistor. The first circuit includes a second cascode transistor having the second dopant type, wherein the second cascode transistor is connected in series with the second transistor. The integrated circuit further includes a first bias circuit configured to adjust a threshold voltage of at least one of the first cascode transistor or the second cascode transistor.


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