Phenol monomer, polymer for forming a resist underlayer film including same, and composition for a resist underlayer film including same

Abstract

A phenolic monomer used in the lithographic process for semiconductor fabrication, a polymer for preparing a resist under-layer comprising the same, and a resist under-layer composition comprising the same, are disclosed. The phenolic monomer is represented by the formula 1 of the specification, in Formula 1, R1, R2, R3, and R4 are independently a hydrogen atom, or a straight-chain, branched, monocyclic or polycyclic saturated or unsaturated hydrocarbon group having 1 to 20 carbon atoms with or without a hetero atom; A is a monocyclic or polycyclic aromatic hydrocarbon group having 4 to 20 carbon atoms; X is an oxygen atom (O) or a sulfur atom (S); and Y is a single bond, a methylene group (—CH2-), an oxygen atom (O), a sulfur atom (S), an amino group (—NH—), or two isolated hydrogen atoms, wherein A, R1, R2, R3, and R4 can be substituted with a straight-chain, branched, monocyclic or polycyclic saturated or unsaturated hydrocarbon group having 1 to 20 carbon atoms with or without a hetero atom; and either R1 and R2 or R3 and R4 are independently linked to each other to form a ring.