The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2015
Filed:
Aug. 28, 2014
Sumitomo Electric Device Innovations, Inc., Yokohama-shi, JP;
Tatsuya Takeuchi, Yokohama, JP;
Sumitomo Electric Device Innovations, Inc., Yokohama-shi, JP;
Abstract
An optical semiconductor device has: a semiconductor structure; a mesa structure including the semiconductor structure, a p-type semiconductor layer formed on a plane portion, a first side face and a second side face of the mesa structure, and a high-resistance semiconductor layer burying the mesa structure and the p-type semiconductor layer. The first side face is inclined toward a principal surface of the substrate more than the second side face. The p-type semiconductor layer has a carrier concentration in a portion related to the first side face lower than that of a portion related to the plane portion and the second side face. A distance between a lower end of the active layer and a boundary between the first side face and the second face in a vertical direction to the plane portion is not less than 0.1 μm and not more than 0.5 μm.