The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2015
Filed:
Dec. 23, 2013
Applicant:
Renesas Electronics Corporation, Kanagawa, JP;
Inventors:
Assignee:
RENESAS ELECTRONICS CORPORATION, Kanagawa, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 21/70 (2006.01); H01L 23/48 (2006.01); H01L 21/00 (2006.01); H01L 29/786 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 27/124 (2013.01); H01L 27/1225 (2013.01);
Abstract
The present invention makes it possible to increase the selectivity of a gate insulation film in an active element formed in a wiring layer. A semiconductor device according to the present invention has a bottom gate type transistor using an antireflection film formed over an Al wire in a wiring layer as a gate wire.