The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2015
Filed:
Feb. 14, 2014
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Tzu-Ming Huang, New Taipei, TW;
Shen-Ping Wang, Keelung, TW;
Lieh-Chuan Chen, Hsinchu, TW;
Chih-Heng Shen, Zhubei, TW;
Po-Tao Chu, New Taipei, TW;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7835 (2013.01);
Abstract
A semiconductor device includes a gate structure, and a source region and a drain region on opposite sides of the gate structure. The source region comprises a first region of a first conductivity type, and a second region of a second conductivity type, the second conductivity type opposite to the first conductivity type. The first region is arranged between the second region and the gate structure. The second region comprises at least one projection protruding into the first region and toward the gate structure.