The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2015
Filed:
Feb. 05, 2014
Applicant:
Broadcom Corporation, Irvine, CA (US);
Inventors:
Shom Surendran Ponoth, Los Angeles, CA (US);
Akira Ito, Irvine, CA (US);
Changyok Park, Irvine, CA (US);
Assignee:
BROADCOM CORPORATION, Irvine, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 27/112 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 23/525 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11206 (2013.01); H01L 23/5252 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01);
Abstract
An anti-fuse device for fin field-effect transistor (finFET) technology includes a dummy gate, an electrically conductive contact, and a diffusion contact. The dummy gate is formed over an end-corner of a fin. The electrically conductive contact is disposed on a portion of the dummy gate and can be used as a first electrode of the device. The diffusion contact is disposed over the fin and can be used as a second electrode of the device.