The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2015

Filed:

Aug. 28, 2013
Applicant:

Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;

Inventors:

Chao-Chieh Li, Hsinchu, TW;

Shyh-An Chi, Hsinchu, TW;

Ruey-Bin Sheen, Taichung, TW;

Chih-Hsien Chang, New Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 3/03 (2006.01); H01L 27/088 (2006.01); H01L 23/00 (2006.01); H01L 29/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/088 (2013.01); H01L 24/91 (2013.01); H01L 29/00 (2013.01); H03K 3/0315 (2013.01); H01L 2924/1305 (2013.01);
Abstract

Structures and methods are provided for fabricating a ring oscillator including a plurality of stages. An example multi-layer structure includes a first device layer, a second device layer, and an inter-level connection structure. The first device layer includes a first transistor structure associated with a first stage of a ring oscillator. The second device layer is formed on the first device layer and includes a second transistor structure associated with a second stage of the ring oscillator. Further, the first inter-level connection structure includes one or more first conductive materials and is configured to electrically connect to the first transistor structure and the second transistor structure.


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