The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2015
Filed:
May. 27, 2014
Applicants:
Stmicroelectronics SA, Montrouge, FR;
Stmicroelectronics (Crolles 2) Sas, Crolles, FR;
Inventors:
Assignees:
STMICROELECTRONICS SA, Montrouge, FR;
STMICROELECTRONICS (CROLLES 2) SAS, Crolles, FR;
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/427 (2006.01); H01L 23/48 (2006.01); H01L 21/768 (2006.01); H01L 23/367 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 21/76898 (2013.01); H01L 23/3677 (2013.01); H01L 23/4275 (2013.01); H01L 24/16 (2013.01); H01L 24/73 (2013.01); H01L 2224/16235 (2013.01); H01L 2224/73204 (2013.01);
Abstract
A method for producing at least one through-silicon via inside a substrate may include forming a cavity in the substrate from a first side of the substrate until an electrically conductive portion is emerged onto. The method may also include forming an electrically conductive layer at a bottom and on walls of the cavity, and at least partly on a first side outside the cavity. The process may further include at least partially filling the cavity with at least one phase-change material. Another aspect is directed to a three-dimensional integrated structure.