The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2015
Filed:
Dec. 23, 2013
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Michael Rogalli, Rottenburg, DE;
Wolfgang Lehnert, Lintach, DE;
Assignee:
INFINEON TECHNOLOGIES AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76829 (2013.01); H01L 21/02178 (2013.01); H01L 21/02205 (2013.01); H01L 21/02271 (2013.01); H01L 21/32139 (2013.01);
Abstract
According to one embodiment, a method for processing a semiconductor device is provided including forming a final metal layer forming a passivation layer over the final metal layer and structuring the passivation layer and the final metal layer to form a patterned metal layer and a patterned passivation layer, wherein the patterned metal layer includes a pad region covered by the patterned passivation layer.