The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2015
Filed:
Aug. 08, 2012
Tomonori Umezaki, Ube, JP;
Isamu Mori, Ube, JP;
Tomonori Umezaki, Ube, JP;
Isamu Mori, Ube, JP;
Central Glass Company, Limited, Ube-shi, JP;
Abstract
There is provided according to the present invention a dry etching method for a laminated film, the laminated film being formed on a substrate and having a laminated structure in which silicon layers and insulating layers are laminated together with a hole or groove defined therein in a direction perpendicular to a surface of the substrate, the dry etching method comprising etching, with an etching gas, parts of the silicon layers appearing on an inner surface of the hole or groove, characterized in that the etching gas comprises: at least one kind of gas selected from the group consisting of ClF, BrF, BrF, IFand IF; and F. It is possible by such a dry etching method to prevent non-uniformity of etching depth between the silicon layers.