The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2015

Filed:

Sep. 26, 2013
Applicant:

Globalfoundries, Inc., Grand Cayman, KY;

Inventors:

Ming He, Slingerlands, NY (US);

Seowoo Nam, Delmar, NY (US);

Craig Child, Gansevoort, NY (US);

Assignee:

GLOBALFOUNDRIES, INC., Grand Cayman, KY;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C03C 15/00 (2006.01); C03C 25/68 (2006.01); C23F 1/00 (2006.01); B44C 1/22 (2006.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0338 (2013.01); H01L 21/0337 (2013.01);
Abstract

Methods for fabricating integrated circuits are provided. In an embodiment, a method for fabricating an integrated circuit includes forming a mask overlying a material to be etched by forming first hard mask segments overlying the material to be etched, forming sacrificial mandrels overlying the material to be etched and around each hard mask segment, forming second hard mask segments overlying the semiconductor substrate and adjacent each sacrificial mandrel, and removing the sacrificial mandrels to form first gaps surrounding each first hard mask segment, wherein each first gap is bounded by a respective first hard mask segment and an adjacent second hard mask segment. The method includes etching the material to be etched through the mask.


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