The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2015
Filed:
Nov. 30, 2012
Applicant:
Industrial Technology Research Institute, Hsinchu, TW;
Inventors:
Ting-Chang Chang, Kaohsiung, TW;
Min-Chen Chen, Kaohsiung, TW;
Yong-En Syu, Tainan, TW;
Kuan-Chang Chang, Kaohsiung, TW;
Fu-Yen Jian, Kaohsiung, TW;
Assignee:
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); H01L 45/00 (2006.01); G11C 11/21 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/145 (2013.01); G11C 11/21 (2013.01); G11C 13/0007 (2013.01); G11C 13/0069 (2013.01); H01L 45/085 (2013.01); H01L 45/1233 (2013.01); H01L 45/1266 (2013.01); H01L 45/16 (2013.01); G11C 2013/0083 (2013.01); G11C 2213/15 (2013.01); G11C 2213/56 (2013.01);
Abstract
A resistive random access memory (RRAM), a controlling method for the RRAM, and a manufacturing method therefor are provided. The RRAM includes a first electrode layer; a resistance switching layer disposed on the first electrode layer; a diffusion metal layer disposed on the resistance switching layer; and a second electrode layer disposed on the diffusion metal layer, wherein at least one extension electrode is disposed in the resistance switching layer.