The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2015
Filed:
Oct. 16, 2013
Tsinghua University, Beijing, CN;
Institute of Physics, Chinese Academy of Sciences, Beijing, CN;
Qi-Kun Xue, Beijing, CN;
Ke He, Beijing, CN;
Xu-Cun Ma, Beijing, CN;
Xi Chen, Beijing, CN;
Li-Li Wang, Beijing, CN;
Ya-Yu Wang, Beijing, CN;
Li Lv, Beijing, CN;
Cui-Zu Chang, Beijing, CN;
Xiao Feng, Beijing, CN;
Tsinghua University, Beijing, CN;
Institute of Physics, Chinese Academy of Sciences, Beijing, CN;
Abstract
An electrical device includes an insulating substrate and a magnetically doped TI quantum well film. The insulating substrate includes a first surface and a second surface. The magnetically doped topological insulator quantum well film is located on the first surface of the insulating substrate. A material of the magnetically doped topological insulator quantum well film is represented by a chemical formula of Cr(BiSb)Te, wherein 0<x<1, 0<y<2, and values of x and y satisfies that an amount of a hole type charge carriers introduced by a doping with Cr is substantially equal to an amount of an electron type charge carriers introduced by a doping with Bi, the magnetically doped topological insulator quantum well film is in 3 QL thickness to 5 QL thickness.