The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2015
Filed:
Apr. 22, 2013
Applicant:
United Microelectronics Corporation, Hsinchu, TW;
Inventors:
Chih-Haw Lee, New Taipei, TW;
Tzu-Ping Chen, Hsinchu County, TW;
Assignee:
UNITED MICROELECTRONICS CORPORATION, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 29/66 (2006.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 29/792 (2013.01); H01L 21/28282 (2013.01); H01L 27/11568 (2013.01); H01L 29/4234 (2013.01); H01L 29/66833 (2013.01);
Abstract
A nonvolatile memory device comprises a substrate, a gate electrode, a single charge trapping sidewall and a source/drain region. The gate electrode is disposed on and electrically isolated from the substrate. The single charge trapping sidewall is disposed adjacent to a sidewall of the gate electrode and electrically isolated from the substrate and the gate electrode, so as to form a non-straight angle between the substrate and the single charge trapping sidewall. The source/drain region is disposed in the substrate and adjacent to the gate electrode.