The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2015

Filed:

Mar. 08, 2013
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Chia-Wei Chang, Taichung, TW;

Srisuda Thitinun, Amphur Muang, TH;

Ryan Chia-Jen Chen, Chiaya, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/8234 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 21/3083 (2013.01); H01L 21/823431 (2013.01); H01L 29/66795 (2013.01); H01L 29/66818 (2013.01); H01L 29/7851 (2013.01); H01L 29/7853 (2013.01); H01L 29/7854 (2013.01);
Abstract

An integrated circuit structure includes a semiconductor substrate, an insulation region extending into the semiconductor substrate, and a semiconductor strip between two opposite portions of the insulation region. The semiconductor strip includes an upper portion higher than top surfaces of the insulation regions and a lower portion in the insulation region. The lower portion has a sidewall including a first sidewall portion having a first slope and a second sidewall portion over and connected to the first sidewall portion. The second sidewall portion has a second slope smaller than the first slope.


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