The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2015
Filed:
Nov. 19, 2013
International Business Machines Corporation, Armonk, NY (US);
Renata Camillo-Castillo, Essex Junction, VT (US);
Vibhor Jain, Essex Junction, VT (US);
Vikas K. Kaushal, Essex Junction, VT (US);
Marwan H. Khater, Astoria, NY (US);
Anthony K. Stamper, Williston, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Fabrication methods, device structures, and design structures for a heterojunction bipolar transistor. A collector is formed in a semiconductor substrate, an intrinsic base is formed on the semiconductor substrate, and an extrinsic base is formed on the intrinsic base. An airgap is located vertically between the extrinsic base and the collector. A contact surface is located adjacent to the airgap. The contact surface is coupled with the collector. A spacer is located laterally between the airgap and the subcollector contact surface.