The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2015

Filed:

Dec. 10, 2012
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Gerhard Schmidt, Wernberg, AT;

Hans-Joachim Schulze, Taufkirchen, DE;

Bernd Kolbesen, Taufkirchen, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/223 (2006.01); H01L 21/225 (2006.01); H01L 21/265 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/167 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0607 (2013.01); H01L 21/223 (2013.01); H01L 21/2253 (2013.01); H01L 21/26506 (2013.01); H01L 21/26513 (2013.01); H01L 29/0843 (2013.01); H01L 29/0847 (2013.01); H01L 29/0878 (2013.01); H01L 29/1016 (2013.01); H01L 29/167 (2013.01); H01L 29/66136 (2013.01); H01L 29/66348 (2013.01); H01L 29/66363 (2013.01); H01L 29/66712 (2013.01); H01L 29/66909 (2013.01); H01L 29/7802 (2013.01);
Abstract

A semiconductor substrate includes a first side and a second side opposite the first side. A semiconductor material extends between the first and second sides and is devoid of active device regions. The semiconductor material has a first region and a second region. The first region extends from the first side to a depth into the semiconductor material and includes chalcogen dopant atoms which provide a base doping concentration for the first region. The second region extends from the first region to the second side and is devoid of base doping. Further, a power semiconductor component is provided.


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