The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2015

Filed:

Aug. 05, 2014
Applicant:

SK Hynix Inc., Icheon, KR;

Inventor:

Wan Choon Park, Icheon, KR;

Assignee:

SK HYNIX INC., Icheon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 27/118 (2006.01); H01L 25/065 (2006.01);
U.S. Cl.
CPC ...
H01L 24/14 (2013.01); H01L 25/065 (2013.01); H01L 27/11898 (2013.01); H01L 2224/1148 (2013.01); H01L 2224/14051 (2013.01); H01L 2224/14181 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06541 (2013.01);
Abstract

A semiconductor device includes a semiconductor layer having a first surface and a second surface, a through electrode penetrating the semiconductor layer and having a protruding portion that protrudes over the second surface of the semiconductor layer, a front-side bump disposed on the first surface of the semiconductor layer and electrically coupled to the through electrode, a passivation pattern including a first insulation pattern that surrounds a sidewall of the protruding portion of the through electrode and extends onto the second surface of the semiconductor layer and a second insulation pattern that covers the first insulation pattern and has an etch selectivity with respect to the first insulation pattern, and a back-side bump covering an end surface of the protruding portion of the through electrode and extending onto the passivation pattern.


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