The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2015

Filed:

Feb. 10, 2014
Applicants:

Globalfoundries Inc., Grand Cayman, KY;

Intermolecular Inc., San Jose, CA (US);

Inventors:

Reiner Willeke, Dresden, DE;

Tanya Atanasova, Dresden, DE;

Anh Duong, Fremont, CA (US);

Greg Nowling, San Jose, CA (US);

Assignees:

GLOBALFOUNDRIES, INC., Grand Cayman, KY;

INTERMOLECULAR, INC., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 23/00 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 24/11 (2013.01); H01L 21/32134 (2013.01); H01L 21/32139 (2013.01); H01L 24/13 (2013.01); H01L 2224/1162 (2013.01); H01L 2224/11614 (2013.01); H01L 2224/11831 (2013.01); H01L 2224/13023 (2013.01); H01L 2224/13147 (2013.01); H01L 2924/014 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01022 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/2064 (2013.01); H01L 2924/20102 (2013.01);
Abstract

Methods for etching copper in the fabrication of integrated circuits are disclosed. In one exemplary embodiment, a method for fabricating an integrated circuit includes providing an integrated circuit structure including a copper bump structure and a copper seed layer underlying and adjacent to the copper bump structure and etching the seed layer selective to the copper bump structure using a wet etching chemistry consisting of HPOin a volume percentage of about 0.07 to about 0.36, HOin a volume percentage of about 0.1 to about 0.7, and a remainder of HO, and optionally NHOH.


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