The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2015

Filed:

Feb. 28, 2013
Applicant:

Renesas Electronics Corporation, Kanagawa, JP;

Inventors:

Satoshi Uno, Kanagawa, JP;

Hideaki Tsuchiya, Kanagawa, JP;

Shinji Yokogawa, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/768 (2006.01); H01L 23/498 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76841 (2013.01); H01L 23/49811 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/81 (2013.01); H01L 24/05 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05022 (2013.01); H01L 2224/05099 (2013.01); H01L 2224/05186 (2013.01); H01L 2224/05572 (2013.01); H01L 2224/05582 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/1146 (2013.01); H01L 2224/1147 (2013.01); H01L 2224/11472 (2013.01); H01L 2224/13017 (2013.01); H01L 2224/13022 (2013.01); H01L 2224/13083 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/14133 (2013.01); H01L 2224/14135 (2013.01); H01L 2224/14136 (2013.01); H01L 2224/14177 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/16238 (2013.01); H01L 2224/814 (2013.01); H01L 2224/81191 (2013.01); H01L 2224/81385 (2013.01); H01L 2224/81447 (2013.01); H01L 2224/81801 (2013.01); H01L 2224/94 (2013.01); H01L 2924/00013 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/3656 (2013.01);
Abstract

A semiconductor chip SC includes an electrode pad PAD. A Cu pillar PIL is formed on the electrode pad PAD. In addition, an interconnect substrate INT includes a connection terminal TER. The connection terminal TER contains Cu. For example, the connection terminal TER is formed of Cu, and is formed, for example, in a land shape. However, the connection terminal TER may not be formed in a land shape. The Cu pillar PIL and the connection terminal TER are connected to each other through a solder layer SOL. The solder layer SOL contains Sn. A Ni layer NIL is formed on either the Cu pillar PIL or the connection terminal TER. The minimum value L of the thickness of the solder layer SOL is equal to or less than 20 μm.


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