The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2015
Filed:
Aug. 14, 2013
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Dechao Guo, Wappingers Falls, NY (US);
Shu-Jen Han, Cortlandt Manor, NY (US);
Chung-Hsun Lin, White Plains, NY (US);
Ning Su, Fishkill, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 21/336 (2006.01); G01N 27/414 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 29/16 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
G01N 27/4146 (2013.01); G01N 27/4145 (2013.01); H01L 29/1606 (2013.01); H01L 29/42384 (2013.01); H01L 29/4908 (2013.01); H01L 29/66742 (2013.01); H01L 29/78684 (2013.01); H01L 51/0048 (2013.01);
Abstract
A method for forming a sensor includes forming a channel in substrate, forming a sacrificial layer in the channel, forming a sensor having a first dielectric layer disposed on the substrate, a graphene layer disposed on the first dielectric layer, and a second dielectric layer disposed on the graphene layer, a source region, a drain region, and a gate region, wherein the gate region is disposed on the sacrificial layer removing the sacrificial layer from the channel.