The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2015
Filed:
Aug. 03, 2012
Applicants:
Tadahiro Ohmi, Miyagi, JP;
Akinobu Teramoto, Miyagi, JP;
Tomoyuki Suwa, Miyagi, JP;
Inventors:
Assignee:
National University Corporation Tohoku University, Miyagi, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); F27B 17/00 (2006.01); H01L 21/02 (2006.01); H01L 21/302 (2006.01); H01L 21/67 (2006.01); H01L 21/677 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
F27B 17/0025 (2013.01); H01L 21/02052 (2013.01); H01L 21/02238 (2013.01); H01L 21/02252 (2013.01); H01L 21/302 (2013.01); H01L 21/3247 (2013.01); H01L 21/67017 (2013.01); H01L 21/67109 (2013.01); H01L 21/67126 (2013.01); H01L 21/67757 (2013.01);
Abstract
In a silicon wafer which has a surface with a plurality of terraces formed stepwise by single-atomic-layer steps, respectively, no slip line is formed.