The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2015
Filed:
Aug. 02, 2011
Takuya Sugawara, Yokohama, JP;
Hikaru Aoshima, Yokohama, JP;
Yousong Jiang, Yokohama, JP;
Ichiro Shiono, Yokohama, JP;
Ekishu Nagae, Yokohama, JP;
Takuya Sugawara, Yokohama, JP;
Hikaru Aoshima, Yokohama, JP;
Yousong Jiang, Yokohama, JP;
Ichiro Shiono, Yokohama, JP;
Ekishu Nagae, Yokohama, JP;
SHINCRON CO., LTD., Kanagawa, JP;
Abstract
A film deposition method of a silicon carbide thin film having a high transmissivity and high film strength applicable for optical use purposes is provided. The film can be formed safely and efficiently in a short time and on a low heat resistance substrate. The method can include depositing a silicon carbide thin film on a moving substrate by using a film formation apparatus configured such that a reaction process region and film formation process regions are arranged spatially separated from one another in a vacuum container. Silicon targets can be sputtered in one region and carbon targets can be sputtered in another region. Thereby, an interlayer thin film containing silicon and carbon is formed on the substrate. Next, in another region, the interlayer thin film can be exposed to plasma generated in an atmosphere of a mixed gas including inert gas and hydrogen.