The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2015

Filed:

Mar. 14, 2013
Applicants:

Steven R. J. Brueck, Albuquerque, NM (US);

Deying Xia, Belmont, MA (US);

Yuliya Kuznetsova, Albuquerque, NM (US);

Alexander Neumann, Albuquerque, NM (US);

Inventors:

Steven R. J. Brueck, Albuquerque, NM (US);

Deying Xia, Belmont, MA (US);

Yuliya Kuznetsova, Albuquerque, NM (US);

Alexander Neumann, Albuquerque, NM (US);

Assignee:

STC.UNM, Albuquerque, NM (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B01D 69/04 (2006.01); G03F 7/20 (2006.01); B81C 1/00 (2006.01); B82Y 30/00 (2011.01);
U.S. Cl.
CPC ...
B01D 69/04 (2013.01); B81C 1/00071 (2013.01); G03F 7/2051 (2013.01); B82Y 30/00 (2013.01); Y10S 977/78 (2013.01); Y10S 977/84 (2013.01); Y10T 137/0324 (2015.04); Y10T 137/3006 (2015.04);
Abstract

In accordance with the invention, there is a method of forming a nanochannel including depositing a photosensitive film stack over a substrate and forming a pattern on the film stack using interferometric lithography. The method can further include depositing a plurality of silica nanoparticles to form a structure over the pattern and removing the pattern while retaining the structure formed by the plurality of silica nanoparticles, wherein the structure comprises an enclosed nanochannel.


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