The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2015
Filed:
Aug. 31, 2012
Akihiro Kojima, Kanagawa-ken, JP;
Yosuke Akimoto, Kanagawa-ken, JP;
Hideyuki Tomizawa, Gunma-ken, JP;
Hideko Mukaida, Tokyo, JP;
Miyoko Shimada, Kanagawa-ken, JP;
Yoshiaki Sugizaki, Kanagawa-ken, JP;
Hideto Furuyama, Kanagawa-ken, JP;
Akihiro Kojima, Kanagawa-ken, JP;
Yosuke Akimoto, Kanagawa-ken, JP;
Hideyuki Tomizawa, Gunma-ken, JP;
Hideko Mukaida, Tokyo, JP;
Miyoko Shimada, Kanagawa-ken, JP;
Yoshiaki Sugizaki, Kanagawa-ken, JP;
Hideto Furuyama, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to an embodiment, a semiconductor light emitting device includes a semiconductor layer having a light emitting layer. The device also includes a p-side electrode provided on a first region including the light emitting layer; an n-side electrode provided on a second region layer not including the light emitting layer; and a first insulating film having a first opening communicating with the p-side electrode and a second opening communicating with the n-side electrode. A p-side interconnection is provided on the first insulating film and electrically connected to the p-side electrode through the first opening. An n-side interconnection is provided on the first insulating film and electrically connected to the n-side electrode through the second opening. The p-side interconnection has a plurality of protrusive parts protruding toward the n-side interconnection, and the n-side interconnection has a plurality of portions extending between the protrusive parts of the p-side interconnection.