The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2015
Filed:
Feb. 24, 2014
Gang Zhang, Gyeonggi-Do, KR;
Kyoung-sub Shin, Gyeonggi-Do, KR;
Gang Zhang, Gyeonggi-Do, KR;
Kyoung-Sub Shin, Gyeonggi-Do, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;
Abstract
A memory device includes a plurality of channels, a plurality of first charge storage sites coupled to first sides of respective ones of the channels, and a plurality of second charge storage sites coupled to second sides of respective ones of the channels. The first charge storage sites correspond to first memory cells and the second charge storage sites coupled to second memory cells. At least one of the channels is a dummy channel not connected to a bit line, and a blocking layer is contiguously formed around the first and second charge storage sites and the channels.