The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2015
Filed:
Feb. 08, 2008
Nobuyuki Kaji, Kawasaki, JP;
Ryo Hayashi, Yokohama, JP;
Hisato Yabuta, Machida, JP;
Katsumi Abe, Kawasaki, JP;
Nobuyuki Kaji, Kawasaki, JP;
Ryo Hayashi, Yokohama, JP;
Hisato Yabuta, Machida, JP;
Katsumi Abe, Kawasaki, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
There is provided a thin-film transistor including at least a substrate, a gate electrode, a gate insulating layer, an oxide semiconductor layer, a source electrode, a drain electrode and a protective layer, wherein the oxide semiconductor layer is an amorphous oxide containing at least one of the elements In, Ga and Zn, the gate electrode-side carrier density of the oxide semiconductor layer is higher than the protective layer-side carrier density thereof, and the film thickness of the oxide semiconductor layer is 30 nm±15 nm.