The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2015
Filed:
Jun. 13, 2013
Applicant:
Globalfoundries, Inc., Grand Cayman, KY;
Inventors:
Hong Yu, Rexford, NY (US);
Wang Zheng, Ballston Lake, NY (US);
Huang Liu, Mechanicville, NY (US);
Yongsik Moon, Loudonville, NY (US);
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/28 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 21/28008 (2013.01); H01L 29/495 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01);
Abstract
An intermediate semiconductor structure of a FinFET device in fabrication includes a substrate, a plurality of fin structures coupled to the substrate and a dummy gate disposed perpendicularly over the fin structures. A portion of the dummy gate is removed between the fin structures to create one or more vias and the one or more vias are filled with a dielectric. The dummy gate is then replaced with a metal gate formed around the dielectric-filled vias.