The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2015
Filed:
Sep. 12, 2012
Chu-kuang Liu, Hsinchu County, TW;
Chu-Kuang Liu, Hsinchu County, TW;
Excelliance MOS Corporation, Hsinchu County, TW;
Abstract
An edge terminal structure of a power semiconductor device is provided that includes a substrate, a first and a second electrodes disposed on a surface and a back of the substrate respectively, a first field plate, and a second field plate. The power semiconductor device includes an active area and an edge termination area, and there is a trench in a surface of the substrate in the edge terminal area beside the active area. The first field plate is disposed on a sidewall of the trench and extends on a tail of the trench, and it includes at least a L-shaped electric-plate, a gate insulation layer under the L-shaped electric-plate, and the first electrode on the L-shaped electric-plate. The second field plate includes at least an insulation layer and the first electrode thereon. The insulation layer covers the tail of the trench and a tail of the L-shaped electric-plate further.