The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2015
Filed:
Jul. 25, 2008
Applicants:
Jizhong LI, Bordentown, NJ (US);
Anthony J. Lochtefeld, Ipswich, MA (US);
Inventors:
Jizhong Li, Bordentown, NJ (US);
Anthony J. Lochtefeld, Ipswich, MA (US);
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 29/10 (2006.01); H01L 21/02 (2006.01); H01L 21/8238 (2006.01); H01L 21/8252 (2006.01); H01L 21/8258 (2006.01); H01L 27/06 (2006.01); H01L 29/66 (2006.01); H01L 21/762 (2006.01); H01L 29/04 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1054 (2013.01); H01L 21/02381 (2013.01); H01L 21/02433 (2013.01); H01L 21/02521 (2013.01); H01L 21/02609 (2013.01); H01L 21/02639 (2013.01); H01L 21/02647 (2013.01); H01L 21/8252 (2013.01); H01L 21/8258 (2013.01); H01L 21/823807 (2013.01); H01L 27/0605 (2013.01); H01L 29/66795 (2013.01); H01L 21/7624 (2013.01); H01L 29/045 (2013.01); H01L 29/785 (2013.01);
Abstract
A method of forming a semiconductor structure includes forming an opening in a dielectric layer, forming a recess in an exposed part of a substrate, and forming a lattice-mismatched crystalline semiconductor material in the recess and opening.