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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9153640 B1

PDFFull Text
Date of Patent:
Oct. 06, 2015

Filed:

Jun. 30, 2014

Process for forming a capacitor structure with rutile titanium oxide dielectric film

Applicant:

Nanya Technology Corp., Tao-Yuan Hsien, TW;

Inventors:

Chun-I Hsieh, Taoyuan County, TW;

Daniel Damjanovic, Perrysburg, OH (US);

Assignee:

NANYA TECHNOLOGY CORP., Gueishan Dist., Taoyuan, TW;

Attorneys:

Winston Hsu

Scott Margo

Primary Examiner:

Reema Patel

Assistant Examiner:

Syed Gheyas

Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 49/02 (2006.01); H01G 4/10 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/40 (2013.01); H01G 4/10 (2013.01); H01L 21/0234 (2013.01); H01L 21/02186 (2013.01); H01L 21/02271 (2013.01); H01L 21/02323 (2013.01);
Abstract

A process of forming a capacitor structure includes providing a substrate. Next, a first electrode is deposited onto the substrate. Later, a water-based ALD process is performed to deposit a transitional amorphous TiOlayer on the first electrode. Subsequently, the transitional amorphous TiOlayer is treated by oxygen plasma to transform the entire transitional amorphous TiO2 layer into a rutile TiOlayer. Finally, a second electrode is deposited on the rutile TiOlayer.

Find Patent Forward Citations

Hsieh, Chun-I. (2015). Process for forming a capacitor structure with rutile titanium oxide dielectric film (U.S. Patent No. 9153640). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9153640

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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