The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2015
Filed:
Jan. 10, 2013
Applicant:
Renesas Electronics Corporation, Kanagawa, JP;
Inventors:
Assignee:
RENESAS ELECTRONICS CORPORATION, Kanagawa, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/105 (2006.01); H01L 21/02 (2006.01); H01L 27/06 (2006.01); H01L 27/108 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01); H01L 27/11 (2006.01); H01L 27/12 (2006.01); H01L 27/24 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01); H01L 27/10 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 27/105 (2013.01); H01L 27/0688 (2013.01); H01L 27/1082 (2013.01); H01L 27/10873 (2013.01); H01L 27/10894 (2013.01); H01L 27/10897 (2013.01); H01L 27/1104 (2013.01); H01L 27/1116 (2013.01); H01L 27/11526 (2013.01); H01L 27/11556 (2013.01); H01L 27/11573 (2013.01); H01L 27/11582 (2013.01); H01L 27/124 (2013.01); H01L 27/1218 (2013.01); H01L 27/2436 (2013.01); H01L 29/7889 (2013.01); H01L 29/7926 (2013.01); H01L 27/088 (2013.01); H01L 27/092 (2013.01); H01L 27/101 (2013.01); H01L 27/1108 (2013.01); H01L 27/1157 (2013.01); H01L 27/11521 (2013.01); H01L 27/11524 (2013.01); H01L 27/11568 (2013.01);
Abstract
There is provided a readily manufacturable semiconductor device including two transistors having mutually different characteristics. The semiconductor device includes a substrate, a multilayer wiring layer disposed over the substrate, a first transistor disposed in the multilayer wiring layer, and a second transistor disposed in a layer different from a layer including the first transistor disposed therein of the multilayer wiring layer, and having different characteristics from those of the first transistor. This can provide a readily manufacturable semiconductor device including two transistors having mutually different characteristics.