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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9153588 B1

PDFFull Text
Expired
Date of Patent:
Oct. 06, 2015

Filed:

Jan. 10, 2013

Semiconductor device and a method for manufacturing a semiconductor device

Applicant:

Renesas Electronics Corporation, Kanagawa, JP;

Inventors:

Hiroshi Sunamura, Kanagawa, JP;

Naoya Inoue, Kanagawa, JP;

Kishou Kaneko, Kanagawa, JP;

Assignee:

RENESAS ELECTRONICS CORPORATION, Kanagawa, JP;

Attorney:

Young & Thompson

Primary Examiner:

Julio J Maldonado

Assistant Examiner:

Moazzam Hossain

Int. Cl.
CPC ...
H01L 27/105 (2006.01); H01L 21/02 (2006.01); H01L 27/06 (2006.01); H01L 27/108 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01); H01L 27/11 (2006.01); H01L 27/12 (2006.01); H01L 27/24 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01); H01L 27/10 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 27/105 (2013.01); H01L 27/0688 (2013.01); H01L 27/1082 (2013.01); H01L 27/10873 (2013.01); H01L 27/10894 (2013.01); H01L 27/10897 (2013.01); H01L 27/1104 (2013.01); H01L 27/1116 (2013.01); H01L 27/11526 (2013.01); H01L 27/11556 (2013.01); H01L 27/11573 (2013.01); H01L 27/11582 (2013.01); H01L 27/124 (2013.01); H01L 27/1218 (2013.01); H01L 27/2436 (2013.01); H01L 29/7889 (2013.01); H01L 29/7926 (2013.01); H01L 27/088 (2013.01); H01L 27/092 (2013.01); H01L 27/101 (2013.01); H01L 27/1108 (2013.01); H01L 27/1157 (2013.01); H01L 27/11521 (2013.01); H01L 27/11524 (2013.01); H01L 27/11568 (2013.01);
Abstract

There is provided a readily manufacturable semiconductor device including two transistors having mutually different characteristics. The semiconductor device includes a substrate, a multilayer wiring layer disposed over the substrate, a first transistor disposed in the multilayer wiring layer, and a second transistor disposed in a layer different from a layer including the first transistor disposed therein of the multilayer wiring layer, and having different characteristics from those of the first transistor. This can provide a readily manufacturable semiconductor device including two transistors having mutually different characteristics.

Find Patent Forward Citations

Sunamura, Hiroshi. (2015). Semiconductor device and a method for manufacturing a semiconductor device (U.S. Patent No. 9153588). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9153588

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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