The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2015
Filed:
Dec. 24, 2013
Macronix International Co., Ltd., Hsinchu, TW;
MACRONIX International Co., Ltd., Hsinchu, TW;
Abstract
Provided is a semiconductor device including a deep doped region of a first conductivity type, a well region of a second conductivity type, a base region of the first conductivity type, an insulated gate bipolar transistor (IGBT) and a metal oxide semiconductor (MOS). The well region is disposed in the deep doped region. The base region is disposed in the well region and is not connected to the deep doped region. The IGBT is disposed on the well region at the first side of the base region, and includes a first doped region of the second conductivity type disposed in the base region. The MOS is disposed on the well region and the deep well region at the second side of the base region, and includes a second doped region of the second conductivity type disposed in the base region.