The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2015
Filed:
Sep. 11, 2012
Dosun Lee, Gwangju, KR;
Byung Lyul Park, Seoul, KR;
Gilheyun Choi, Seoul, KR;
Kwangjin Moon, Hwaseong-si, KR;
Kunsang Park, Hwaseong-si, KR;
Sukchul Bang, Yongin-si, KR;
Seongmin Son, Hwaseong-si, KR;
Dosun Lee, Gwangju, KR;
Byung Lyul Park, Seoul, KR;
Gilheyun Choi, Seoul, KR;
Kwangjin Moon, Hwaseong-si, KR;
Kunsang Park, Hwaseong-si, KR;
Sukchul Bang, Yongin-si, KR;
Seongmin Son, Hwaseong-si, KR;
Abstract
A semiconductor device may include a semiconductor substrate, a through via electrode, and a buffer. The through via electrode may extend through a thickness of the semiconductor substrate with the through via electrode surrounding an inner portion of the semiconductor substrate so that the inner portion of the semiconductor substrate may thus be isolated from the outer portion of the semiconductor substrate. The buffer may be in the inner portion of the semiconductor substrate with the through via electrode surrounding and spaced apart from the buffer. Related methods are also discussed.