The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 2015

Filed:

Aug. 02, 2012
Applicants:

Ronald G. Filippi, Wappingers Falls, NY (US);

John A. Fitzsimmons, Poughkeepsie, NY (US);

Kevin Kolvenbach, Walden, NY (US);

Ping-chuan Wang, Hopewell Junction, NY (US);

Inventors:

Ronald G. Filippi, Wappingers Falls, NY (US);

John A. Fitzsimmons, Poughkeepsie, NY (US);

Kevin Kolvenbach, Walden, NY (US);

Ping-Chuan Wang, Hopewell Junction, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 25/065 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); H01L 21/76898 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/13025 (2013.01); H01L 2224/9202 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06541 (2013.01); H01L 2924/0002 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/04941 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/1301 (2013.01); H01L 2924/1305 (2013.01);
Abstract

A through-substrate via (TSV) structure includes at least two electrically conductive via segments embedded in a substrate and separated from each other by an electrically conductive barrier layer therebetween. The length of each individual conductive via segment is typically equal to, or less than, the Blech length of the conductive material so that the stress-induced back flow force, generated by each conductive barrier layer, cancels the electromigration force in each conductive via segment. Consequently, the TSV structures are immune to electromigration, and provide reliable electrical connections among a chips stacked in 3 dimensions.


Find Patent Forward Citations

Filippi, Ronald. (2015). Electromigration immune through-substrate vias (U.S. Patent No. 9153558). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9153558

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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