The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2015
Filed:
Dec. 19, 2014
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Brian M. Henderson, Escondido, CA (US);
Shiqun Gu, San Diego, CA (US);
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/50 (2006.01); H01L 25/18 (2006.01); H01L 25/065 (2006.01); H01L 23/498 (2006.01); H01L 23/48 (2006.01); H01L 23/525 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/50 (2013.01); H01L 23/49827 (2013.01); H01L 23/49833 (2013.01); H01L 25/0657 (2013.01); H01L 25/18 (2013.01); H01L 23/481 (2013.01); H01L 23/525 (2013.01); H01L 24/17 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/17181 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06527 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06562 (2013.01); H01L 2225/06572 (2013.01); H01L 2225/06589 (2013.01); H01L 2924/0002 (2013.01); H01L 2924/00014 (2013.01);
Abstract
A semiconductor device includes a die coupled to a substrate, a first memory device coupled to a surface of the die opposite the substrate and a coupling device coupled between the surface of the die opposite the substrate and a second memory device such that the second memory device at least partially overlaps the first memory device. Also disclosed is method of mounting first and second memory devices on a die in an at least partially overlapping manner.