The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9153419 B1

PDF
Full Text
Expired
Date of Patent:
Oct. 06, 2015

Filed:

Mar. 24, 2011
Applicant:

Tadashi Mitsui, Kamakura, JP;

Inventor:

Tadashi Mitsui, Kamakura, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 37/28 (2006.01); H01J 37/22 (2006.01);
U.S. Cl.
CPC ...
H01J 37/28 (2013.01); H01J 37/222 (2013.01); H01J 2237/24592 (2013.01); H01J 2237/2817 (2013.01);
Abstract

A pattern defect inspection method includes generating electron beam irradiation point track data on the basis of first data on an inspection target pattern, irradiating the electron beam to the inspection target pattern in accordance with the electron beam irradiation point track data, detecting secondary electrons generated from the inspection target pattern due to the irradiation of the electron beam, acquiring second data regarding a signal intensity of the secondary electrons from a signal of the detected secondary electrons, and detecting an abnormal point from the second data and outputting the abnormal point as a defect of the inspection target pattern. The electron beam irradiation point track data includes data on a track of irradiation points of an electron beam to the inspection target pattern and is intended to control over scanning with the electron beam, the electron beam irradiation point track data.


Find Patent Forward Citations

Mitsui, Tadashi. (2015). Pattern defect inspection using data based on secondary electron from pattern (U.S. Patent No. 9153419). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9153419

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