The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2015
Filed:
May. 20, 2014
Advanced Semiconductor Engineering Inc., Kaohsiung, TW;
Jaw-Ming Ding, Taoyuan County, TW;
Advanced Semiconductor Engineering Inc., Kaohsiung, TW;
Abstract
The RF stacked power amplifier comprises a voltage-dividing circuit, a negative feedback bias circuit, a current source circuit and a stacked amplifying circuit. The voltage-dividing circuit receives a system voltage and divides the system voltage for outputting a first reference partial voltage and a second reference partial voltage. The negative feedback bias circuit receives a negative feedback reference voltage and correspondingly outputs a second bias reference voltage according to a result of comparing the second reference partial voltage and the negative feedback reference voltage. The current source circuit determines a bias reference current according to the first reference partial voltage. The stacked amplifying circuit outputs the negative feedback reference voltage and determines an operation bias point according to a first bias reference voltage and the bias reference current. The RF stacked power amplifier makes the voltage-drop and the power consumption of each transistor equal via the voltage-dividing circuit.