The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2015
Filed:
Oct. 29, 2012
Fudan University, Shanghai, CN;
Xi Lin, Shanghai, CN;
Pengfei Wang, Shanghai, CN;
Qingqing Sun, Shanghai, CN;
Wei Zhang, Shanghai, CN;
FUDAN UNIVERSITY, Shanghai, CN;
Abstract
The invention relates to the technical field of semiconductor memories, in particular to a tunnel transistor structure integrated with a resistance random access memory and a manufacturing method thereof. The tunnel transistor structure in the present invention comprises a semiconductor substrate, and a tunnel transistor and a resistance random access memory formed on the semiconductor substrate, wherein the gate dielectric layer of the tunnel transistor extends to the surface of a drain region of the tunnel transistor; the part of the gate dielectric layer on the surface of the drain region of the tunnel transistor forms the resistance-variable storage layer of the resistance random access memory. In this invention, the high-quality gate dielectric layer of the tunnel transistor and the resistance-variable storage layer of the resistance random access memory are obtained by primary atomic layer deposition which integrates the resistance random access memory and tunnel transistor together without increasing steps. This process is simple and can combine the shallow trench isolation or field oxygen isolation and ion implantation or diffusion of source electrode and drain electrode to make integration convenient.