The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2015
Filed:
Sep. 10, 2013
Applicant:
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Inventor:
Neil Zhao, Shanghai, CN;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/6656 (2013.01); H01L 29/0649 (2013.01); H01L 29/0653 (2013.01); H01L 29/1054 (2013.01); H01L 29/66651 (2013.01); H01L 29/78 (2013.01); H01L 29/66545 (2013.01); H01L 29/66553 (2013.01);
Abstract
A method is provided for fabricating a transistor. The method includes providing a semiconductor substrate; and forming a trench in the semiconductor substrate by etching the semiconductor substrate. The methods also includes forming a threshold-adjusting layer doped with a certain type of threshold-adjusting ions to adjust the threshold voltage of the transistor on the semiconductor substrate in the trench; and forming a carrier drifting layer on the threshold-adjusting layer. Further the method includes forming a gate structure on the carrier drifting layer corresponding to the trench.