The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2015

Filed:

Jul. 05, 2013
Applicant:

Stmicroelectronics S.a., Montrouge, FR;

Inventors:

Pierre Bar, Grenoble, FR;

Sylvain Joblot, Bizonnes, FR;

Assignee:

STMicroelectronics SA, Montrouge, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01L 27/02 (2006.01); H01L 27/08 (2006.01);
U.S. Cl.
CPC ...
H01L 28/92 (2013.01); H01L 27/0207 (2013.01); H01L 27/0805 (2013.01); H01L 28/91 (2013.01);
Abstract

A semiconductor device includes a substrate wafer and having a front face and a back face. A front hole is formed in the front face and a multilayer capacitor is formed in the front hole. A back hole is formed in the back face of the substrate wafer to expose at least a portion of the multilayer capacitor. A front electrical connection on the front face and a back electrical connection in the back hole are used to make electrical connection to first and second conductive plates of the multilayer capacitor which are separated by a dielectric layer. The front hole may have a cylindrical shape or an annular shape.


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