The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2015

Filed:

May. 28, 2013
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Chun-Hsiung Hung, Hsinchu, TW;

Nai-Ping Kuo, Hsinchu, TW;

Kuen-Long Chang, Taipei, TW;

Ken-Hui Chen, Hsinchu, TW;

Yu-Chen Wang, Kaohsiung, TW;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/00 (2006.01); G11C 29/12 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 29/12005 (2013.01); G11C 16/349 (2013.01); G11C 16/3418 (2013.01); G11C 16/3431 (2013.01);
Abstract

An integrated circuit memory device includes an array of non-volatile, charge trapping memory cells, configured to store data values in memory cells in the array using threshold states, including a higher threshold state characterized by a minimum threshold exceeding a selected read bias. A controller includes a stand-by mode, a write mode and a read mode. Retention check logic executes on power-up, or during the stand-by mode, to identify memory cells in the higher threshold state which fail a threshold retention check. Also, logic is provided to reprogram the identified memory cells.


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