The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2015
Filed:
Sep. 15, 2011
Takeshi Masuda, Shizuoka, JP;
Takuya Ideno, Shizuoka, JP;
Masahiko Kajinuma, Shizuoka, JP;
Nobuhiro Odajima, Shizuoka, JP;
Yohei Uchida, Shizuoka, JP;
Koukou Suu, Shizuoka, JP;
Takeshi Masuda, Shizuoka, JP;
Takuya Ideno, Shizuoka, JP;
Masahiko Kajinuma, Shizuoka, JP;
Nobuhiro Odajima, Shizuoka, JP;
Yohei Uchida, Shizuoka, JP;
Koukou Suu, Shizuoka, JP;
Ulvac, Inc., Kanagawa, JP;
Abstract
A thin film manufacturing method and a thin film manufacturing apparatus are provided to manufacture a thin film with good reproducibility. A dummy substrate is conveyed into a chamber, and a dummy processing gas is supplied to the dummy substrate. Moreover, a product substrate is conveyed into the chamber, and a raw material gas different from the dummy processing gas is supplied to the product substrate. The raw material gas contains metal material for manufacturing a thin film with a metal organic chemical vapor deposition (MOCVD) method. Since the raw material gas is not used as a dummy processing gas, the amount of metal material to be used can be minimized in manufacturing the thin film with good reproducibility.