The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2015

Filed:

Sep. 27, 2012
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Akinobu Kakimoto, Nirasaki, JP;

Atsushi Endo, Nirasaki, JP;

Takahiro Miyahara, Nirasaki, JP;

Shigeru Nakajima, Nirasaki, JP;

Satoshi Takagi, Nirasaki, JP;

Kazumasa Igarashi, Nirasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); C23C 16/24 (2006.01); C30B 25/02 (2006.01); C30B 29/06 (2006.01); C23C 16/02 (2006.01); C23C 16/04 (2006.01); C23C 16/455 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
C23C 16/24 (2013.01); C23C 16/0272 (2013.01); C23C 16/045 (2013.01); C23C 16/45523 (2013.01); C30B 25/02 (2013.01); C30B 29/06 (2013.01); H01L 21/67109 (2013.01);
Abstract

A thin film forming method which forms a seed film and an impurity-containing silicon film on a surface of an object to be processed in a processing container configured to be vacuum exhaustible includes: performing a first step which forms the seed film by supplying a seed film raw material gas including at least any one of an aminosilane-based gas and a higher silane into the processing container; and performing a second step which forms the impurity-containing silicon film in an amorphous state by supplying a silane-based gas and an impurity-containing gas into the processing container.


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