The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2015
Filed:
Mar. 12, 2013
Infineon Technologies Ag, Neubiberg, DE;
Maria Cotorogea, Taufkirchen, DE;
Frank Wolter, Munich, DE;
Hans-Joachim Schulze, Taufkirchen, DE;
Franz-Josef Niedernostheide, Muenster, DE;
Yvonne Gawlina-Schmidl, Pullach, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A semiconductor device in a semiconductor substrate includes a first main surface and a transistor cell. The transistor cell includes a drift region of a first conductivity type, a body region of a second conductivity type between the drift region and the first main surface, an active trench in the first main surface extending to the drift region, a source region of the first conductivity in the body region adjacent to the active trench, and a body trench at the first main surface extending to the drift region and adjacent to the body region and the drift region. The active trench includes a gate insulating layer at sidewalls and a bottom side, and a gate conductive layer. The body trench includes a conductive layer and an insulating layer at sidewalls and a bottom side, and asymmetric to a perpendicular axis of the first main surface and the body trench center.