The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2015

Filed:

Feb. 14, 2011
Applicants:

Tetsuya Yamashita, Osaka, JP;

Tokuo Yoshida, Osaka, JP;

Yoshimasa Chikama, Osaka, JP;

Yoshifumi Ohta, Osaka, JP;

Yuuji Mizuno, Osaka, JP;

Hinae Mizuno, Yamato, JP;

Masahiko Suzuki, Osaka, JP;

Okifumi Nakagawa, Osaka, JP;

Yoshiyuki Harumoto, Osaka, JP;

Yoshinobu Miyamoto, Osaka, JP;

Inventors:

Tetsuya Yamashita, Osaka, JP;

Tokuo Yoshida, Osaka, JP;

Yoshimasa Chikama, Osaka, JP;

Yoshifumi Ohta, Osaka, JP;

Yuuji Mizuno, Osaka, JP;

Masahiko Suzuki, Osaka, JP;

Okifumi Nakagawa, Osaka, JP;

Yoshiyuki Harumoto, Osaka, JP;

Yoshinobu Miyamoto, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 27/127 (2013.01); H01L 27/124 (2013.01); H01L 27/1225 (2013.01); H01L 27/1255 (2013.01); H01L 27/1262 (2013.01);
Abstract

Each of the auxiliary capacitors () includes a capacitor line () comprised of the same material as the gate electrode () and provided in the same layer as the gate electrode (), the gate insulating film () provided so as to cover the capacitor line (), a capacitor intermediate layer () provided using the oxide semiconductor and provided on the gate insulating film () so as to overlap the capacitor line (), and a capacitor electrode () provided on the capacitor intermediate layer (), and the capacitor intermediate layer () is conductive.


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